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D
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27
APT10026JN 1000V 33A 0.26
"UL Recognized" File No. E145592 (S)
ISOTOP(R)
POWER MOS IV (R)
MAXIMUM RATINGS
Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25C Linear Derating Factor
1
SINGLE DIE ISOTOP(R) PACKAGE
All Ratings: TC = 25C unless otherwise specified.
APT 10026JN UNIT Volts Amps
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
1000 33 132 30 690 5.52 -55 to 150 300
and Inductive Current Clamped
Volts Watts W/C C
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, I D = 250 A) On State Drain Current
2
MIN APT10026JN
TYP
MAX
UNIT Volts
1000
ID(ON)
APT10026JN
33
Amps
(VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, I D = 5.0mA)
2
RDS(ON)
APT10026JN
0.26
Ohms
IDSS IGSS VGS(TH)
250 1000 100 2 4
A nA Volts
THERMAL CHARACTERISTICS
Symbol RJC RCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.) MIN TYP MAX UNIT C/W
050-0038 Rev F
0.18 0.05
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadera Nord
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT10026JN
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX UNIT
11610 1345 415 465 83 61 21 19 70 14
14000 1880 620 700 125 90 40 40 105 30
ns nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage
1
MIN APT10026JN
TYP
MAX
UNIT
33 132 1.8 1250 49 2000 70
Amps
APT10026JN
2
(VGS = 0V, IS = -ID [Cont.])
Volts ns C
Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/s)
PACKAGE CHARACTERISTICS
Symbol LD LS VIsolation CIsolation Torque Characteristic / Test Conditions Internal Drain Inductance (Measured From Drain Terminal to Center of Die.) Internal Source Inductance (Measured From Source Terminals to Source Bond Pads) RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Drain-to-Mounting Base Capacitance (f = 1MHz) Maximum Torque for Device Mounting Screws and Electrical Terminations. MIN TYP MAX UNIT nH Volts
3 5 2500 70 13
pF lb*in
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.2 , THERMAL IMPEDANCE (C/W) 0.1 0.05 D=0.5 0.2 0.1 0.01 0.005 0.05
Note:
PDM
0.02 0.01
t1
050-0038 Rev F
0.001 0.0005 10-5
SINGLE PULSE 10-4
t2 t Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
Z
JC
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT10026JN
80 VGS=6, 8, 10, 15V ID, DRAIN CURRENT (AMPERES) 60 5.5V ID, DRAIN CURRENT (AMPERES) 60 80 VGS=6, 8, 10, 15V 5.5V
40
5V
40
5V
20
4.5V
20
4.5V
4V 0 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 100 TJ = -55C ID, DRAIN CURRENT (AMPERES) 80 TJ = +25C TJ = +125C 0 0
4V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 3.0
TJ = 25C 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE NORMALIZED TO V = 10V @ 0.5 I [Cont.]
GS D
2.5
60
2.0
VGS=10V
40 TJ = -55C
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
1.5 VGS=20V 1.0
20
TJ = +125C TJ = +25C
0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 35 ID, DRAIN CURRENT (AMPERES) 30 25 20 15 10 5 0
0
0.5
0
20 40 60 80 160 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.2
1.1
1.0
0.9
0.8
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5
I = 0.5 I [Cont.]
D D
25
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.4
0.7
V
GS
= 10V
2.0
1.2
1.5
1.0
1.0
0.8
0.5
0.6 050-0038 Rev F
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.4
-50
APT10026JN
200 ID, DRAIN CURRENT (AMPERES) 100 50
OPERATION HERE LIMITED BY RDS (ON)
50,000 10S 100S C, CAPACITANCE (pF) 10,000 5,000 Coss 1,000 500 Crss Ciss
10 5
1mS 10mS
1 .5 TC =+25C TJ =+150C SINGLE PULSE
100mS DC
.1
1 5 10 50 100 500 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D D
.1 .5 1 5 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 400
100
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20 VDS=100V VDS=200V VDS=500V 12
16
100 50
TJ =+150C TJ =+25C TJ =-55C
8
10 5
4
200 400 600 800 1000 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOT-227 (ISOTOP(R)) Package Outline
11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source
050-0038 Rev F
Gate
Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.

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